In-situ electron microscopy study of non-volatile resistive switching in Mott insulator VO 2

Shaobo Cheng; Min-Han Lee; Xing Li; Lorenzo Fratino; Marcelo Rozenberg; Ivan Schuller; Yimei Zhu

doi:10.1017/S1431927621007790

Journal Articles Microscopy and Microanalysis Year : 2021

In-situ electron microscopy study of non-volatile resistive switching in Mott insulator VO 2

(1) , , , , (2, 3) , (4) ,

1
2
3
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Shaobo Cheng

Function : Author

Brookhaven National Laboratory [Upton, NY]

Min-Han Lee

Function : Author
PersonId : 798838
ORCID : 0000-0001-9093-4891

Xing Li

Function : Author

Lorenzo Fratino

Function : Author
PersonId : 808471
ORCID : 0000-0003-1288-2859

Marcelo Rozenberg

Function : Author
PersonId : 768337
ORCID : 0000-0001-9161-0370

Centre National de la Recherche Scientifique

Université Paris-Saclay

Ivan Schuller

Function : Author

University of California [San Diego]

Yimei Zhu

Function : Author

Domains

Condensed Matter [cond-mat]

Marcelo Rozenberg : Connect in order to contact the contributor

https://hal-enpc.archives-ouvertes.fr/hal-03323463

Submitted on : Saturday, August 21, 2021-3:04:21 PM

Last modification on : Friday, March 24, 2023-2:53:22 PM

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HAL Id : hal-03323463 , version 1
DOI : 10.1017/S1431927621007790

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Shaobo Cheng, Min-Han Lee, Xing Li, Lorenzo Fratino, Marcelo Rozenberg, et al.. In-situ electron microscopy study of non-volatile resistive switching in Mott insulator VO 2. Microscopy and Microanalysis, 2021, 27 (S1), pp.2162-2164. ⟨10.1017/S1431927621007790⟩. ⟨hal-03323463⟩

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In-situ electron microscopy study of non-volatile resistive switching in Mott insulator VO 2

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